The High voltage transistor characteristics report provides key DC electrical measurements for two high voltage NMOS transistors (one depletion type transistor and one enhanced type transistor) from the charge pump area of the Toshiba TH58TEG7DDJTA20 19 nm MLC NAND Flash device. The transfer characteristics (ID vs. VGS) and output characteristics (ID vs. VDS) are reported for both high voltage transistors. The body effect, substrate leakage and breakdown characteristics are also reported for the transistors.
Electrical parameters including linear and saturation threshold voltages, sub-threshold swing, transconductance, saturation and leakage currents, processes gain factor and breakdown voltages are reported for the transistors.