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Published: 28 July 2014

The Techinsights Multi-temperature transistor characteristics report provides key D.C. electrical measurements for two NMOS and two PMOS transistors from the core region of the Intel 22 nm Xeon E5-4620V2 Haswell processor. The report includes plotted transfer and output characteristics and tabulated measurements of key performance benchmarks measured at -20 °C, 25 °C and 80 °C. The transfer characteristics (ID vs. VGS) and output characteristics (ID vs. VDS) are reported for both NMOS and PMOS transistors with a VDS voltage swing of 1.0 V at -20 ºC, 25 ºC and 80 ºC. The body effect, gate leakage, and punchthrough characteristics are also reported for both NMOS and PMOS transistors. Electrical parameters including linear threshold voltages, sub-threshold swing, transconductance, saturation and leakage currents, processes gain factor, gate leakage and drain punch-through voltages are reported for both NMOS and PMOS transistors.

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