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Published: 27 January 2014

The probing analysis on the Toshiba (Sandisk/Toshiba) TH58TEG7DDJTA20 19 nm MLC NAND Flash will be completed on one of the dual 64 Gbit dice stacked inside the package. The analysis will provide details of the programming algorithm and on the internal voltages required to program, read, and erase the memory cells at the four ranges between reference threshold voltages. The probing analysis tests the flash in an active probe arrangement and voltage traces of the signals are recorded during program, read, and erase operations. The monitored signals includes a selected Main Wordline (MWL); a selected Bitline (BL); a Sourceline (SL), a Pwell isolation; and Global String Select Line (GSSL) and Global Ground Select Line (GGSL). TechInsights will first need to extract portions of the data and address path to determine where to position the probe points. This report contains: 1. Waveforms of the Program/Verify operation on signals: MWL_sel, BL_sel, SL, PWELL, GSSL and GGSL. • Program all ”11” • Program all “01” • Program all “10” • Program all “00” 2. Waveforms of the Read operation on signals: MWL_sel, BL_sel, SL, PWELL, GSSL and GGSL. • Programmed states: “11”, “10”, “01” and “00” 3. Waveforms of the Erase operation on signals: MWL_sel, BL_sel, SL, PWELL, GSSL and GGSL. • Programmed Block • Erased state Block

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