Interested in this report?

Published: 9 May 2014

This report presents key DC electrical characteristics of NMOS and PMOS transistors from the sense amplifier, Wordline driver and periphery regions of the Elpida F8164A1MD-GD-F, measured at 85 °C. Electrical parameters including linear threshold voltages, saturation and leakage currents are reported for the transistors.

Recent OMR Reports

Buy Now  |   Price: $9,000.00 (USD)   |   Report  |  DEF-1709-802  |   Published: 17 November 2017
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
Buy Now  |   Price: $9,000.00 (USD)   |   Report  |  DEF-1709-803  |   Published: 17 November 2017
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
Buy Now  |   Price: $50,000.00 (USD)   |   Report  |  SCE-1709-802  |   Published: 16 November 2017
This project presents a Standard Cell Essentials analysis of the Samsung 8895 Exynos 9 Series application processor, built in Samsung’s 10LPE high-k metal gate (HKMG) FinFET CMOS process. This analysis...