Interested in this report?

Published: 20 March 2017

The Advanced CMOS Essentials (ACE) deliverable for DRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

  • Downstream product teardown
  • Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
  • SEM bevel through the logic region and DRAM
  • SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
  • Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

Report Description

This report presents an Advanced CMOS Essentials on the 20 nm process found in the SK Hynix H5AN8G8NAFR-UHC 8 Gb DDR4 SDRAM.

Recent OMR Reports

FAR-1804-801  |   Published: 13 July 2018
This report presents a Digital Functional Analysis of the Microsemi MSP300 die found inside the Microsemi PolarFire MPF300T component. The PolarFire MPF300T component was extracted from the Microsemi PolarFire...
TCR-1804-801  |   Published: 12 July 2018
This report presents key DC electrical characteristics for logic NMOS and PMOS transistors located in the core region of the Samsung S5E9810A02 die, found inside a Samsung Exynos 9810 PoP component. The...
FAR-1805-804  |   Published: 12 July 2018
This report presents a Basic Functional Analysis of the AXSEM AG MICROFOOT and AXGEN1-2 dies found inside the ON Semiconductor AX-SFJK-API-1-01-TB05 SoC package. This report contains the following detailed...