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Published: 21 December 2017

The complete Advanced CMOS Essentials Part 2 deliverable includes a concise analyst’s summary of critical device metrics, with focus on salient word line and bit line connectivity features and supported by the following analyses and image folders:<\br>

    Large area scanning electron microscopy (SEM) image mosaic of word line and bit line areas, showing all metal levels required to extract connectivity of the array to the word line and bit line decoder regions
  • SEM image mosaics viewable in CircuitVision software
  • Low voltage (LV) and high voltage (HV) periphery transistor transistor transmission electron microscopy (TEM) detail images
  • Extended materials analysis, including energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) line scan data
  • Tabular summary of key dimensions
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

Report Description

This report presents Part 2 of an Advanced CMOS Essentials on the Samsung K9CKGY8H5A 64-layer 3D NAND flash.

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