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Published: 8 August 2018

The Advanced CMOS Essentials (ACE) deliverable for DRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

  • Package photographs and X-rays, top metal and poly die photographs
  • SEM bevel through the memory array and periphery
  • SEM cross section along the word line and bit line of the general device structure, metals, dielectrics, and capacitors
  • Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

Report Description

This product presents an Advanced CMOS Essentials Image Set and Summary of the Micron 1x nm process found in the Micron MT40A1G8SA-062E DDR4 SDRAM.

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