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Published: 5 October 2018

This report presents a Memory Functional Analysis of the Samsung K9GFGD8U0M 3D V-NAND die found inside the Samsung KM3H6001CM-B515.

This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) cross-sectional micrographs across the memory array showing the general structure of the flash cell array, die dielectric materials, metal interconnects, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to diffusion layer
  • Identification of major functional blocks on a diffusion layer die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software

Report Description

This report presents a Memory Functional Analysis of the Samsung K9GFGD8U0M 3D V-NAND die found inside the Samsung KM3H6001CM-B515.

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