Sinjin Dixon-Warren is a Senior Process Analyst at TechInsights with over 20 years of experience with semiconductor analysis and is a Subject Matter Expert (SME) for Power Electronics Analysis. He holds a PhD in chemical physics from the University of Toronto; some of his specialties include semiconductor physics and devices, materials science and surface analytical chemistry.
October 8, 2020
UnitedSiC is a fabless silicon carbide (SiC) vendor, founded in 1999 by a team of researchers at Rutgers University. While most vendors in the SiC power electronics market have pursued SiC MOSFET and Schotty Barrier Diode (SBD) technology, UnitedSiC has chosen to champion SiC junction FET (JFET) technology.
The advantage of the JFET approach is very low on-state resistance (RDSON) values. Typically, the JFET is wired in series with a low voltage MOSFET in a so-called “cascode” configuration. As described recently in EEPower, this is a “modern twist on an old idea.” To make the best of SiC technology, manufacturers have revisited an idea from the 1930s, where vacuum tubes were wired in series to form a hybrid device with performance better than either of the individual components. The technique was called cascode and has reappeared over the years in bipolar junction transistor and MOSFET devices.
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