The Advanced Memory Essentials (AME) deliverable for 3D NAND flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the in-depth image folders.

The in-depth image folders will contain the following:

• Downstream product teardown images
• Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
• SEM bevel through the logic region and NAND flash SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
• SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
• Two TEM cross sections, orthogonal to the word and bit lines, showing the NAND flash array cells, the lower metals and dielectrics, transistor gates, isolation, and other FEOL feature
• TEM bevel through the NAND flash
• TEM-EDS and TEM-EELS analyses of main materials

The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitor.