
This report contains the following detailed information:
- Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
- Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels including, fin/shallow trench isolation (STI), gate, contacts, and minimum pitch metals
- Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
- Plan-view optical micrograph of the die delayered to the gate level
- Identification of major functional blocks on the gate level die photograph
- Table of functional block sizes and percentage die utilization
- High-resolution top metal and polysilicon level die photographs delivered in the CircuitVision software