CircuitVision Analysis on the Samsung K9DUGY8J5B-DCK0 (K9AFGD8J0B Die) 92-Layer 3D V-NAND Flash IO Buffer

Availability

Published

Product Code

CAR-1904-903

Release Date

03/06/2019

Product Item Code

SAM-K9DUGY8J5B-DCK0

Device Manufacturer

Samsung

Device Type

NAND Flash

Subscription

Memory - NAND & DRAM

Channel

Memory - NAND Circuit Analysis

CircuitVision Analysis on the Samsung K9DUGY8J5B-DCK0 (K9AFGD8J0B Die) 92-Layer 3D V-NAND Flash IO Buffer

The following is a Circuit Vision Analysis report on the Samsung K9DUGY8J5B-DCK0 (with a die marking of K9AFGD8J0B) 92-layer NAND flash I/O buffer area. The report contains a full set of schematics and annotated photographs divided into the following sections:

Architectural Overview
I/O Buffer
Standard Cells
Appendix A - Signal List

Related Analysis	メーカー	解析の種類	Subscription Channel
Intel 144L QLC 1Tb 3D NAND Memory Peripheral Design	Intel	Circuit	Memory - NAND Peripheral Design
Intel 144L QLC 1Tb 3D NAND Advanced Memory Essentials	Intel	Process	Memory - Process
Samsung K4C8E1K6MX 2nd Gen. 8 Gb HBM2 DRAM Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis
Intel 29F08T2A0CQK1 144L 3D NAND Memory Floorplan Analysis	Intel	Floorplan	Memory - NAND Floorplan Analysis
Samsung 128L 512 Gb TLC die Memory Floorplan Analysis	Samsung	Floorplan	Memory - NAND Floorplan Analysis
Internal Waveform Overview of the Intel 1 Tb 144L QLC 3D NAND	Intel	Other	Memory - NAND Internal Waveform Overview
Micron Gen2 1y nm 8 Gb GDDR6 Memory Floorplan Analysis	Micron Technology	Floorplan	Memory - DRAM Floorplan Analysis
Samsung 12 Gb 1z EUV LPDDR5 Advanced Memory Essentials	Samsung	Process	Memory - Process
Internal Waveform Overview of the Samsung 92L QLC 3D NAND	Samsung	System	Memory - NAND Internal Waveform Overview
Samsung 1x nm 4 Gb LPDDR4X Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis