This report presents an advanced memory essentials analysis (AME) of the Samsung K4RAH086VB-BCQK 16 Gb DDR5 SDRAM using the D1y nm process generation, and extracted from the G.Skill Trident Z5 32 GB DIMM desktop RAM module.
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:

• Downstream product teardown
• Package photographs and X-rays, top metal and polysilicon die photographs
• Scanning electron microscopy (SEM) cross-section along the word line (WL) and the bit line (BL) of the 3D NAND array
• TEM cross-section along the BL
• TEM cross-section along the WL
• SEM/TEM bevel
  • Memory array
  • Memory array edge
  • Periphery at the polysilicon level