This report presents an advanced memory essentials (AME) of the Fujitsu MB85R8M2TABGL-G 8 Mb FRAM.
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:

• Downstream product teardown
• Package photographs and X-rays, top metal and polysilicon die photographs
• Scanning electron microscopy (SEM) cross-section along the word line (WL) and the bit line (BL) of the 3D NAND array
• TEM cross-section along the BL
• TEM cross-section along the WL
• SEM/TEM bevel
  • Memory array
  • Memory array edge
  • Periphery at the polysilicon level