This report presents a power package analysis (PKG) of the Qorvo UnitedSiC UJ4SC075009B7S 750 V 9 mΩ SiC FET module. The module features stacked Si/SiC MOSFET/JFET dies within a small form factor D2PAK-7L package. A threshold voltage of 4.5 Vgs makes it suitable as a standard ‘drop-in replacement’ for silicon power devices using a standard gate drive, as well as low Rds(on) of 9 mOhm, the cascode configuration allows the use of the Si body diode to give a diode forward voltage of 1.1 V.
The PKG includes observed device metrics and salient features supported by the following unannotated image folders:

• Package photographs and X-ray images
• Die photographs
• Optical and SEM package cross-section photographs
• SEM-EDS spectra of selected package materials

The image set for a PKG project is derived from a package cross sectional analysis, supplemented by jet etch decapsulation, when applicable. Value added information, such as additional planes of cross-sectioning, may be included on a case-by-case basis. The PKG deliverable provides competitive benchmarking information and enables cost-effective tracking of multiple competitors' technology.