This report presents an Advanced Memory Essentials (AME) of the Micron MT29F4T08EQLEEG8-QB_E 176L 512Gb TLC 3D NAND die. It has the highest layer numbers to date.
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:

• Package photographs and X-rays, top metal and polysilicon die photographs
• SEM cross section along the word line (WL) and the bit line (BL) of the ReRAM module
• TEM cross section along the BL direction (BLD)
• TEM cross section along the WL direction (BLD)
• SEM bevel
  • Memory array bevel
  • Memory periphery at the polysilicon gate level
  • Memory periphery at the polysilicon gate level
  The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.