This report is a DRAM Process Review of the Samsung 32nm 2X 4Gb Mobile LPDDR2 DRAM. This report contains extensive TEM plan view and cross sectional analysis and is focused on the key technology related to memory fabrication and performance. Including the general structure, detailed analysis of the active silicon and wordline, microcapacitor structure and materials analysis, memory cell layout, metallization, and logic. This focused report helps to provide an understanding of the layout of memory cells in the latest DRAM technologies. SEM and TEM-based analysis along with critical dimensions are provided in this report.