Internal Waveform Analysis on the Sandisk/Toshiba 15 nm X3 (3 bit per cell) 128 Gbit NAND Flash Memory

Product Code
IWA-10914
Release Date
22/02/2016
Availability
Published
Product Item Code
SAN-MicroSD_32GB
Device Manufacturer
SanDisk
Device Type
NAND Flash
The standard waveform analysis will provide details of the programming algorithm and on the internal voltages required to program, read and erase the memory cells. The probing analysis tests the flash in an active probe arrangement and voltage traces of the signals are recorded during program, read and erase operations. The monitored signals includes a selected Global Wordline (GWL_sel); a Bitline (BL); a Sourceline (SL), a Pwell isolation and Nwell (PNWELL), Global String Select Line (GSSL), Global Ground Select Line (GGSL) and three unselected Global Wordlines. TechInsights will first need to extract and analyze circuit portions of the array and peripherals to determine where to position the probe points. The standard waveform report will contain: 1. Waveforms of page program operation on signals: GWL_sel, BL, SL, PNWELL, GSSL, GGSL and three unselected GWLs. • Program pattern: “000”, “001”, “010” “011” “100”, “101”, “110” and “111”. 2. Waveforms of page read operation on signals: GWL_sel, BL, SL, PNWELL, GSSL, GGSL and three unselected GWLs. • Read pattern: “000”, “001”, “010” “011” “100”, “101”, “110” and “111”. 3. Waveforms of block erase operation on signals: GWL_sel, BL, SL, PNWELL, GSSL, GGSL and three unselected GWLs.
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