This report presents a power essentials analysis (PEF) of the EPC EPC2152 GaN half-bridge power IC. The GaN IC technology and half-bridge power stage are all integrated onto a single GaN die. As observed in the PFR, there are several innovative fabrication techniques such as MIM capacitors and through GaN trenches with contact to Si substrate. There are a wide range of applications from Class D amplification to industrial motor drives.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process