Innoscience INN650D02 650 V GaN Power FET Floorplan Analysis

Product Code

PFR-2009-801

Release Date

19/10/2020

Availability

Published

Product Item Code

IS1-INN650D02

Device Manufacturer

Innoscience

Device Type

GaN Power FET

Subscription

Power Semiconductor

Channel

Power Semiconductor - Gallium Nitride (GaN) Floorplan

Innoscience INN650D02 650 V GaN Power FET Floorplan Analysis

This report presents a Power Floorplan analysis of the Innoscience INN650D02. The INN650D02 is a 650 V, 200 mΩ on-resistance gallium nitride (GaN) power FET. The device uses a high-voltage power GaN high electron mobility transistor (HEMT).

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