Availability
Published
Product Code
PFR-2209-801
Product Item Code
EFP-EPC2221
Device Manufacturer
EFFICIENT POWER CONVERSION
Device Type
N-Channel FET
EPC2221 Automotive Qualified 100 V Dual FET Power Floorplan Analysis
This report presents a Power Floorplan Analysis of the Efficient Power Conversion EPC2221 device. The EPC2221 is an automotive-qualified enhancement-mode dual GaN FET (HEMT) with a common source. It has a rated 100 V maximum continuous drain-source voltage (VDS) and a typical drain-source on-resistance (RDS(ON)) of 40 mΩ. It is suited for automotive Lidar/ToF, high-frequency DC-DC, and wireless power applications.
The image set for a standard PFR project is derived from decapsulation of two samples, followed by scanning electron microscopy (SEM) analysis of a cross section of the power transistor die and optical analysis of the power transistor die delayered to the substrate or gate level. The PFR deliverable includes:
The image set for a standard PFR project is derived from decapsulation of two samples, followed by scanning electron microscopy (SEM) analysis of a cross section of the power transistor die and optical analysis of the power transistor die delayered to the substrate or gate level. The PFR deliverable includes:
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