Customer will gain factual insight into Texas Instruments LBC5 power BiCMOS process. The TAS5111DAD is built using TI’s TILBC5 bipolar-CMOS-DMOS (BCD) process. The part incorporates three levels of metallization (including a metal 3 redistribution layer), 0.35 µm minimum gate length NMOS transistors with cobalt silicided gates and source/drain diffusions, vertical NPN bipolar transistors, N-DMOS transistors, double-poly, triple-well process on a P-type substrate.