Interested in this report?

Published: 13 July 2017


This report presents a Basic Functional Analysis of the Qualcomm QUA-V5AM68 die found inside the Qualcomm WCN3990 wireless combo SoC. The component was extracted from the Xiaomi Tech Xia-Mi6 multi-band handset.

This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in the ICWorks Browser
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

Report Description

This report presents a Basic Functional Analysis of the Qualcomm QUA-V5AM68 die found inside the Qualcomm WCN3990 wireless combo SoC.

Recent OMR Reports

DEF-1901-802  |   Published: 15 March 2019
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
EXR-1901-801  |   Published: 14 March 2019
This report presents an Exploratory Analysis of the embedded NOR flash memory from the Infineon Technologies SAK-TC399XE-256F300SAAEES 32-bit microcontrollerunit (MCU) die.
TCR-1901-801  |   Published: 8 March 2019
This report presents key DC electrical characteristics for NMOS and PMOS transistors of the sense amplifier and word line (WL) drivers of the Samsung K4F6S164HA LPDDR4X SDRAM die. The K4F6S164HA die was...