This report presents a Memory Functional Analysis of the Samsung K9GFGD8U0M 3D V-NAND die found inside the Samsung KM3H6001CM-B515.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) cross-sectional micrographs across the memory array showing the general structure of the flash cell array, die dielectric materials, metal interconnects, major features, and transistors
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to diffusion layer
• Identification of major functional blocks on a diffusion layer die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software