• Samsung 18 nm DRAM Analysis

  • In April 2017, Samsung became the world’s first manufacturer to mass produce 10 nm-class DRAM. In June 2017, TechInsights published a blog based on our first learnings on this innovation that detailed a memory density increase of 32.8% when comparing 8Gb DRAM 18 nm and 20 nm die.

    Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

    • Found as PoPin S8 and S8+, Google Pixel 2 (G011A) and others
    • K4F8E164HM die extracted from the Samsung Galaxy S8 model SM-G950W
    • 366 FBGA
    • 32Gb

    K4A8G085WC-BCRC (DDR4)

    • K4A8G085WC die extracted from the Samsung M471A2K43CB1-CRC SO-DIMM
    • 78 FBGA
    • 8GB

    TechInsights is planning a full suite of teardown reports on Samsung 18 nm DDR:

    • Advanced CMOS Essentials Report (ACE-1701-805) – published April 2017
    • Process Flow Analysis (PFA-1711-801) – published November 2017
    • Process Flow Full Analysis (PFF-1711-801)
    • DRAM Redundancy Exploratory Report (EXR-1711-801)

    Additionally, we have completed Exploratory Report EXR-1707-801 on the Samsung 18nm LPDDR4X – published October 2017, and are interested in exploring further with a full analog circuit analysis report.

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