This report presents a Memory Floorplan Analysis of the YMTC Y01-08 found inside UNIC Memory UNMEN05G21E31BS. The UNMEN05G21E31BS was extracted from the UNIC Memory S1-C new generation security USB flash drive. This is the first 3D Xtacking™ NAND device from YMTC, featuring 64L active word lines with 73 gates in total for a NAND string, and wafer-to-wafer bonding technology used to connect periphery circuits and memory array.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Plan-view SEM micrograph of the die delayered to the WL and BL layers
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in CircuitVision software
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process