This report presents a Memory Floorplan Analysis of the GLOBALFOUNDRIES NIMBU52C found inside the IBM 02CY297. The first embedded DRAM on finFET process flow; first finFET SOI device.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Plan-view SEM micrograph of the memory array delayered to the WL, BL, and active, layers
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in CircuitVision software
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process