Efficient Power Conversion EPC2619 100V 3.3mOhm Gen 6 GaN Transistor Power Essentials

The Efficient Power Conversion EPC2619 device includes a single gallium nitride (GaN) power high electron mobility transistor (HEMTs) die with a continuous rating voltage of 100 V, the power GaN transistors operate in enhancement mode (normally-off) and exhibit a typical 3.3 mΩ on-resistance (RDS(ON)) at 5 V VGS bias.

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