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Published: 10 October 2018

This report presents a Memory Design – Cell (MDC) layout of the Micron MT40A1G8SA-062E (211B die).

This report contains the following detailed information:

  • Package photographs, top metal, and polysilicon die photographs
  • SEM cross-sectional micrographs through the bit line (BL) showing the general structure of the DRAM cell array, die dielectric materials, and major features
  • Shematic drawing of DRAM cell circuit diagram
  • SEM bevel through the memory array showing memory array plan-view features and realignment of the image set between the active, WL, BL, and capacitor
  • Memory cell layout analysis

Report Description

This report presents a Memory Design – Cell (MDC) layout of the Micron MT40A1G8SA-062E (211B die).

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