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Published: 13 October 2017

This report presents a Transistor Characterization of the Intel 29F01T2ANCTH2 64-layer 3D NAND flash memory (B16A die). Presented are key DC electrical characteristics for NMOS and PMOS transistors located in the peripheral logic region.

Report Description

This report presents a Transistor Characterization of the Intel 29F01T2ANCTH2 64-layer 3D NAND flash memory (B16A die).

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