Avalanche AS301G208 UMC 22 nm 512Mb MRAM Process Analysis
Explore Avalanche's ASxxxx208 STT-MRAM series and AS301G208-MECHSAMP, a space-grade P-SRAM memory with exceptional endurance and efficiency. This AME report analyzes its advanced design using UMC's 22 nm pMTJ STT-MRAM process.
The Avalanche ASxxxx208 is a spin-transfer torque magneto-resistive random-access memory (STT-MRAM) series and the AS301G208-MECHSAMP comprising two AV1GHD MRAM dies, a space-grade high-performance, one gigabit dual-quad serial peripheral interface (SPI) persistent SRAM (P-SRAM) memory is the third generation of Avalanche’s P-SRAM product and offers SRAM-compatible read/write timing, infinite endurance (over 1016 write cycle endurance), excellent data retention (20 years at 85°C), and power benefits over existing nonvolatile solutions. This Advanced Memory Essentials (AME) report provides an analysis of the structure and materials used in the manufacture of the Avalanche AV1GHD MRAM die, fabricated using UMC’s second generation 22 nm ULL with perpendicular magnetic tunnel junction (pMTJ) STT-MRAM process shown in TechInsights’ Embedded & Emerging Memory Technology Roadmap.
