China Enters 2025 with Big Memory Breakthroughs
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TechInsights has discovered not one, but two advanced memory developments out of China’s Yangtze Memory Technologies Corporation (YMTC) and ChangXin Memory Technologies (CXMT). The memory innovation was revealed in two separate devices the TechInsights team sourced – the ZhiTai SSD TiPro9000 and the Gloway 16GBx2 DDR5-6000 UDIMM.
In the ZhiTai SSD TiPro9000, TechInsights’ technical analysis confirmed the first market availability of YMTC’s new and advanced Xtacking4.x 2yyL 1 Tb 3D TLC NAND chip. This development represents a big step by China’s YMTC in approaching a competitive position against Samsung and Micron and shows aspirations to catch SK hynix’s 321-layer 4D PUC NAND devices (expected in 1H25).
TechInsights also sourced the Gloway 16GB x 2 DDR-6000 UDIMM which revealed the CXMT G4 DDR5 DRAM. This represents the first time this advanced node DRAM (produced by CXMT) is seen in the market. While this is a significant advancement, CXMT still trails the three largest DRAM players (Samsung, SK hynix, and Micron) by three years. Yet, it shows consistent progress by the Chinese DRAM maker despite limitations on equipment and materials.
Both developments show material innovation in advanced – as seen in both DRAM and NAND – for the Chinese market. Over the coming days, TechInsights will be publishing more technical details on both devices and looking at the implications to the global semiconductor supply chain.
