This report presents a Memory Floorplan Analysis of the Samsung K4A8G085WD die found inside the Samsung K4A8G085WD-BCTD component. The K4A8G085WD-BCTD was extracted from the Samsung M471A1K43DB1-CTD, which is a DDR4 SODIMM.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• SEM plan-view micrographs at active, word line (WL), and bit line (BL) levels from a beveled sample
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software