This report presents a Memory Floorplan Analysis of the Samsung K9AHGD8J0A 3D V-NAND flash memory die found inside the Samsung KLUGGAR1FA-B2C1 package extracted from a Samsung Galaxy S10+ smartphone.
This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features in the bit line (BL) and word line (WL) directions
• SEM plan-view micrographs at the middle of the vertical channel level and the BL levels from the beveled sample
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software