The Memory DRAM technology roadmap has been updated. Due to the cell scaling limitation at the sub-10 nm class DRAM generations such as 0a, 0b, and 0c, industry leading DRAM companies such as Samsung, SK hynix, Micron, and CXMT are developing advanced DRAM cell prototypes such as 3D DRAM, X-DRAM, IGZO DRAM, and 4F2 cell designs. More innovative cell structure and process integrations will be needed to extend to the sub-10 nm DRAM applications. The DRAM technology roadmap includes the generations, critical processes, including EUVL, and the applications such as computing, low-power mobile, graphic, and high bandwidth memory.