Zentel PSMC 25 nm 4 Gb DDR4 DRAM Advanced Memory Essentials
Unlock critical insights into Zentel PSMC A3F4GH40ABF 25 nm 4 Gb DDR4 DRAM with our Advanced Memory Essentials (AME) report. Includes TEM-EDS, TEM-EELS results, key device metrics, and detailed SEM/TEM imaging. Perfect for semiconductor memory analysis.
This Advanced Memory Essentials (AME) analysis report of Zentel PSMC A3F4GH40ABF 25 nm 4 Gb DDR4 DRAM die includes the concise analyst’s summary of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features supported by the corresponding image folders – Package photographs and X-rays, top metal and polysilicon die photographs – Scanning electron microscopy (SEM) cross-sections along the word line (WL) and the bit line (BL) of the memory array – TEM cross-sections along the WL direction (WLD) and the BL direction (BLD) – SEM/TEM bevel of Memory array, Memory Array edge and Periphery.
