This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the Micron Technology Y2BM die from the MT62F1G64D8CH-036 WT:A LPDDR5 SDRAM. Micron’s LPDDR5 DRAM provides superior power efficiency and faster data access speeds to meet growing consumer demand for artificial intelligence (AI) and 5G functionality in smartphones. This device has a 50% increase in data access speeds and more than 20% power efficiency compared to previous generations. Micron’s next-generation LPDDR5 memory is designed to meet the demands of 5G networks, which will start deploying globally at scale in 2020. Micron LPDDR5 allows 5G smartphones to process data at peak speeds of up to 6.4 Gbps, which is critical for preventing 5G data bottlenecks.