April 16, 2021 Dr. Jeongdong Choe Originally published in Samsung D1z LPDDR5 DRAM with EUV Lithography (EUVL) Finally! After months of waiting, we have seen Samsung Electronics’ applied extreme ultraviolet (EUV) lithography technology for D1z DRAM in mass production! Early last year, Samsung

March 30, 2021 Embedded & Emerging Memory World’s First 1 Gb 28 nm STT-MRAM Product - by Everspin Everspin’s new 1-Gigabit (Gb) Spin Torque Transfer Magneto-resistive Random Access Memory (STT-MRAM) device with a 28 nm process is the world’s first 1 Gb STT-MRAM product. This 4 th generation MRAM

March 23, 2021 Abdullah Rahal TechInsights identifies some of Blackberry’s highest value patent assets through portfolio analysis Download the Summary of Analysis TechInsights’ analysts have examined the Blackberry patent portfolio and partitioned it into a dozen application areas, as well as marked

March 23, 2021 Dr. Jeongdong Choe KIOXIA’s new XL-FLASH for ultra-low latency NAND application We’ve just found a new XL-FLASH product with 96L BiCS4 NAND cell architecture from KIOXIA. According to KIOXIA, XL-FLASH is extremely low-latency, high-performance Flash Memory that is based on 3D BiCS

Dynamic Vison Sensors are Asynchronous imagers. Much like the human eye, they are designed to respond to changes in brightness, with no “Frames” to capture

March 16, 2021 Dr. Jeongdong Choe Advanced 1 Gb 28 nm STT-MRAM products from Everspin Technologies We’ve been waiting for a long time to see the technology details of Everspin’s new stand-alone 1-Gigabit (Gb) Spin Torque Transfer Magneto-resistive Random Access Memory (STT-MRAM) device with 28 nm

March 9, 2021 Dr. Jeongdong Choe A New and advanced ReRAM from Fujitsu We’ve been analyzing a new ReRAM product from Fujitsu Semiconductor. Fujitsu 8 Mb MB85AS8MT is the world’s largest density as a stand-alone mass-produced ReRAM product. The MB85AS8MT is a non-volatile emerging memory with SPI

March 10, 2021 Sinjin Dixon-Warren Power Technology GaN USB-C Charger Market Heating Up in 2021 Gallium nitride (GaN) based high power USB chargers for smartphones, tablets and laptops is a growing area in the power electronics market. TechInsights has been monitoring this market for the past couple

March 03, 2021 Dr Peter Gammon Power Technology Prospects for Commercial High Voltage Silicon Carbide Devices - a Summary SiC power devices have the potential to reach voltage ratings beyond 30 kV, yet today, SiC chip manufacturers are focussed on SiC MOSFETs and Schottky diodes from 600-1700 V. In

The intent of this webinar is to share selected content from our 2020 Image Sensor Device Essentials (DEF) subscription annual presentation.