This report presents a Memory Floorplan Analysis of the Samsung K9AHGD8U0M die found inside the Samsung KLUFG8R1EM-B0C1 3D V-NAND TLC flash memory package.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Plan-view SEM micrograph of the die delayered to the WL and BL layers
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software