This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and wordline driver regions of the Micron Technology Z32D die found inside a Micron Technology MT40A4G4JC-062E:E DDR4 SDRAM BGA package. This is the first commercialized 1z nm DRAM technology node from the industry, with the highest bit density (0.247 Gb/mm2, a 25% increase from Micron 1y nm 16 Gb DDR4 die) and the smallest cell size (0.0020 µm2, scaled down 17% from Micron 1y nm) to date.