Samsung K9DYGY8J5B-CCK0 236L 1Tb 3D NAND Internal Waveform Analysis
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The Samsung 1 Tb 236L triple-level-cell (TLC) 3D NAND flash memory device (die markings: K9AKGD8J0B) is one of 16 dies packaged inside one Samsung K9DYGY8J5B-CCK0 NAND flash memory package, which was found in the MZ-V9P4T0 990 Pro PCIe 4.0 NVMe M.2 4 TB solid state drive (SSD). This report is an Internal Waveform Overview (IWO) containing the program, read, and erase waveforms for the Samsung 1 Tb 236L TLC 3D NAND die. The analysis provides an overview of the internal voltages required to program, read, and erase the flash memory cells. The waveform analysis tests the flash in an active probe arrangement and voltage traces of four signals are recorded during program, read and erase operations while the device is active on the source Samsung MZ-V9P4T0 990 Pro SSD.
