This report presents a Transistor Characterization of the thin-oxide logic transistors found in the Samsung 28 nm high-k metal gate (HKMG) CMOS process used to fabricate the Apple APL0698 A7 application processor. The A7 processor was extracted from an Apple ME814C/A iPad mini tablet. The report presents key DC electrical characteristics for logic NMOS and PMOS transistors located in the core region. Characterization was completed at -10°C, 25°C, and 90°C.