Infineon EDT3 Automotive IGBT from FS1150R08A8P3LMC 750 V HybridPACK Drive G2 Module
Dive into the analysis of Infineon's EDT3 IGBT components and packaging, an essential and cost-productive power module for electric vehicle traction inverters.
Infineon’s HybridPACK Drive G2 is a product family of power modules for electric vehicle (EV) traction inverters. It builds on the HybridPACK Drive G1’s six-pack package and comes with 750 V and 1200 V options using either the new EDT 3 silicon (Si) insulated-gate bipolar transistor (IGBT) or CoolSiC G2 silicon carbide (SiC) MOSFETs.
Even as SiC MOSFETs are becoming increasingly adopted for EV traction inverters, IGBTs is still a cost-productive alternative for this application. Infineon’s EDT3 IGBT is the successor for the EDT2 IGBT, providing a 15-25% increase in power density by reducing the saturation voltage (V[CE,sat]), faster switching with an improved diode, self-controlled turn-off, and an extended junction temperature rating of 185°C. The EDT3 IGBT dies examined in this analysis are found in Infineon’s FS1150R08A8P3LMC 750 V, 1150 A HybridPACK Drive G2 module.
