The Advanced Memory Essentials (AME) deliverable for ST-MRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

• Downstream product teardown
• Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
• SEM bevel through the logic memory array and peripheral regions
• SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
• A single TEM cross section through the MRAM cell and orthogonal to word lines, showing the MRAM cell, metals and dielectrics, cell transistor gate stack, isolation, and other FEOL features

The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.