Applications Processor

The iPhone 8 Plus A1897 model we examined initially is confirmed to contain the A11 Bionic AP with a die mark TMHS09. The A11 is a Package on Package (PoP) with the Micron MT53D384M64D4NY 3GB Mobile LPDDR4x SDRAM. The die size (seal) is 87.66 mm², representing a 30% die shrink compared to the A10. The biggest new feature of the AP at announcement is a dedicated “Neural Engine” primarily for Face ID on the iPhone X, but being an inference engine, it could also be used to improve Siri as well as for AR applications. This should be an Apple custom design based on Apple’s multiple AI startup company acquisitions in recent years. While this inference-based core may not be fully utilized in the iPhone 8, we will not have to wait for the iPhone X to start analyzing and delayering it, for a deeper look at the IP.

A11 Details:

• 30% die area shrink compared to A10
• Big blocks keep this trend: CPU1 is smaller by 30%, GPU is smaller by 40% and SDRAM interface is smaller by 40%
• There is more CPU2 on the A11 than on the A10 (they now use 4 little cores, and before they used only 2). First time we noticed was on the A10
• In relative numbers they are pretty similar: CPUs take about 15%, GPU takes about 20%, SDRAM interface takes about 8%
• GPU remains the same 6-core GPU with common logic
• General location of the blocks is strikingly similar to the A10

So far the biggest difference from the A10 is the addition of the NPU. But is it really the NPU? If you are interested in getting the answer, please contact TechInsights for the upcoming Apple A11 Bionic Application Processor Digital Functional Analysis Report (FAR-1709-802).

Board Shots

Dual Rear-Facing Cameras (12 MP Wide-Angle and 12 MP Telephoto)

The dual camera module size is 21.0 mm x 10.6 mm x 6.3 mm thick. Based on our initial X-rays it appears the wide-angle camera uses optical image stabilization (OIS), while the telephoto camera does not (the same configuration as iPhone 7 Plus).

The wide-angle Sony CIS has a die size of 6.29 mm x 5.21 mm (32.8 mm²). This compares to a 32.3 mm² die size for iPhone 7’s wide-angle CIS. We can confirm a 1.22 µm pixel pitch. We note a new Phase Pixel pattern, but the big news is the absence of surface artifacts corresponding through to the silicon via (TSV) arrays we have seen for a few years. A superficial review of the die photo would suggest it is a regular back-illuminated (BSI) chip. However, we have confirmed it is a stacked (Exmor RS) chip which means hybrid bonding is in use for the first time in an Apple camera!

We can confirm a 1.0 µm pixel pitch and apparent hybrid bonding on the Sony Exmor RS telephoto CIS die, as we see on the wide-angle chip. The die size is 6.29 mm x 5.21 mm (32.8 mm²).

7 MP Front-Facing Camera

The front-facing camera module size is 6.8 X mm x 5.8 mm x 4.4 mm thick.

The front-facing Sony CIS die size is 3.73 mm x 5.05 mm (18.8 mm²) and has a pixel pitch of 1.0 µm. Both are metrics are aligned with iPhone 7’s front-facing camera, however we also noted the absence of TSVs so we’ll be doing more work to explore the hybrid bonding on this Exmor RS die.

RF Transceiver

The Transceiver is new Intel Trx, the PMB5757. After comparing the die photos of the Intel PMB5757 RF Transceiver to the previous PMB5750 used in the iPhone 7/7 Plus, it appears that Intel has re-used most of the previous chip. The two dies are in the same die size and they are almost identical except for minor changes in the left column and bottom row of repeated cells.

The balance of the RF front end looks much like the iPhone 7 with the following observations on winners in our iPhone 8 Plus; Envelope tracking goes to Qorvo 81004, High-band PAMiD goes to Broadcom 8066LC005, Mid-band PAMiD goes to Broadcom 8056LE003 and the Low-band PAMiD goes to Qorvo 76041.

NFC Controller

We were not too surprised to find a NXP NFC module in the iPhone 8 Plus. This one has package markings ‘80V18’. This is different from the PN67V we found in the iPhone 7 Plus.

Again, our lab has got the die marks 7PN552V0C of the controller die.

From the floorplan view, the NFC Controller die in the iPhone 8 Plus is almost the same as the PN80T NFC Controller die in the Samsung Galaxy S8/S8 Plus series phones. The iPhone 8 Plus NFC Controller Security Element die is also very similar to the die in the Samsung Galaxy S8/S8 Plus series phones. TechInsights has previously analyzed the Samsung Galaxy S8 PN80T NFC Controller die and Security Element die. The PN80T NFC Controller die is fabbed in 180 nm node and the Security Element die is fabbed in 40 nm eFlash.