- Downstream product teardown
- Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
- SEM bevel through the logic region and DRAM
- SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
- Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
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