iDEAL Semiconductor iS15M7R1S1C 150 V SuperQ MOSFET Power Essentials

This report reveals how GaN, SiC, and Si power devices are built, using deep imaging and material analysis to expose structure and process quality.

This report presents a detailed process analysis of GaN, SiC, and Si power devices using advanced structural and material characterization techniques. It includes package and die-level imaging (optical/X-ray), SEM plan-view and cross-sectional analysis with SEM-EDS, and TEM with TEM-EDS/EELS for GaN. For Si and SiC, cross-sectional and planar SCM/sMIM are used to assess doping and electrical profiles. Together, these methods provide deep insights into device structure, material composition, and process integrity.