STMicroelectronics FX62A 28 nm FD-SOI ePCRAM Advanced Memory Essentials

AME report details the ST FX62A die, built on Samsung 28nm FD‑SOI with embedded PCM, backed by TEM‑based materials analysis.

This Advanced Memory Essentials (AME) report of the STMicroelectronics FX62A die includes a concise analyst’s summary of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and/or TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features supported by unannotated image folders. The STMicroelectronics FX62A die is fabricated by Samsung using its 28 nm FD-SOI process with embedded phase change memory (PCM) elements integrated at the end of the front-end-of-line (FEOL) between gate and M1.