KIOXIA/WD BiCS8 218L CBA 3D TLC NAND

The landscape of memory and storage applications is experiencing a revolutionary shift with the advent of Hybrid Bonding (HB) technology. This innovation is epitomized by the newly unveiled KIOXIA/WD BiCS8 CBA 3D TLC NAND, recently analyzed by TechInsights. With package markings TH58LKT3Y48BA8J and die markings KIOXIA/Western Digital FYU6 1T, this device showcases an edge-XDEC floor plan design, featuring active cell wordlines within a sophisticated 2-deck integration. KIOXIA’s designation for this structure is CBA, or CMOS directly bonded to Array.

The introduction of KIOXIA and Western Digital’s CBA technology-based 3D BiCS NAND products signals a transformative shift in the industry. Current structures like CuA, COP, and 4D PUC from Micron, Samsung, and SK hynix are anticipated to transition to CBA architecture utilizing hybrid bonding technology. This evolution is further supported by the extensive IP portfolios assigned by TSMC and Xperi, underscoring the industry's commitment to this groundbreaking technology.

As hybrid bonding technology continues to advance, it will play a pivotal role in meeting the ever-growing demands for higher density, improved performance, and reduced form factors in memory and storage applications. The KIOXIA/WD BiCS8 CBA 3D TLC NAND stands as a testament to the potential and future direction of this technology.