NAND Technology Roadmap

3D NAND roadmap update covering 2yyL devices, and hybrid bonding as Samsung, Micron, KIOXIA/Western Digital, and others advance high speed and density.

Now, 2yyL 3D NAND devices are in hand. Industry-leading 3D NAND companies such as Samsung, SK hynix/Solidigm, Micron, KIOXIA/Western Digital, and YMTC continue racing to the future of high-speed and high-density storage applications. The advanced 3D NAND technologies, including multi-stacking cell array, hybrid bonding with NAND array and CMOS logic dice, and package solutions, are described on the roadmap. Samsung recently introduced the V9 V-NAND with 286L active layers. The next V10 V-NAND will adopt hybrid bonding technology like KIOXIA 218L BiCS8 CBA and YMTC Xtacking products. Micron also released 276L with a 3-deck structure recently. KIOXIA/WD BiCS9 will be skipped and will jump directly to the BiCS10 with 332L.